@article{2006-camposeo-arimondo-appl-phys-b-v85-p487,
	Abstract = {Resist-assisted atom lithography with group III elements, specifically with gallium and indium, is demonstrated. Self-assembled monolayers (SAM) of nonanethiols prepared on thin sputtered gold films were exposed to a beam of neutral gallium and indium atoms through a physical mask. The interaction of the Ga and In atoms with the nonanethiol layer, followed by a wet etching process, creates well defined structures on the gold film, with features below 100 nm. The threshold of the lithographic process was estimated by optical methods and found to be around 3 gallium atoms and 12 indium atoms per thiol molecule. Our experiments suggest that resist-assisted atom lithography can be realized with group III elements and possibly extended to new neutral atomic species.},
	Author = {Camposeo, A. AND Maragò, O. AND Fazio, B. AND Klöter, B. AND Meschede, D. AND Rasbach, U. AND Weber, C. AND Arimondo, E.},
	Journal = {Appl. Phys. B},
	Pages = {487},
	Title = {{Resist-assisted atom lithography with group III elements}},
	Volume = {85},
	Year = {2006}
}