We propose to generate a complex light mask for atom nanofabrication by multiplexing light fields sequentially in the time domain or synchronously in the frequency domain. The method effectively superposes intensities rather than electric fields and may be useful for atomic beams at thermal velocity and also at very slow velocities.
The atom pencil we describe here is a versatile tool that writes arbitrary structures by atomic deposition in a serial lithographic process. This device consists of a transversely laser-cooled and collimated cesium atomic beam that passes through a 4-pole atom-flux concentrator and impinges on to micron- and sub-micron-sized apertures. The aperture translates above a fixed substrate and enables the writing of sharp features with sizes down to 280 nm. We have investigated the writing and clogging properties of an atom pencil tip fabricated from silicon oxide pyramids perforated at the tip apex with a sub-micron aperture.
We report the results of a study into the quality of functionalized surfaces for nanolithographic imaging. Self-assembled monolayer (SAM) coverage, subsequent post-etch pattern definition and minimum feature size all depend on the quality of the Au substrate used in atomic nanolithographic experiments. We find sputtered Au substrates yield much smoother surfaces and a higher density of {111} oriented grains than evaporated Au surfaces. A detailed study of the self-assembly mechanism using molecular resolution AFM and STM has shown that the monolayer is composed of domains with sizes typically of 5-25 nm, and multiple molecular domains can exist within one Au grain. Exposure of the SAM to an optically-cooled atomic Cs beam traversing a two-dimensional array of submicron material masks ans also standing wave optical masks allowed determination of the minimum average Cs dose (2 Cs atoms per SAM molecule) and the realization of
M. Mützel Erzeugung von Nanostrukturen mit laserpräparierten thermischen Atomstrahlen, (2004), DoktorarbeitBibTeX
The method of neutral atom lithography allows one to transfer to a substrate a 2D intensity modulation of an atomic beam imposed by an inhomogeneous light field. The complexity of the pattern depends on the properties of the light field constructed from the superposition of multiple laser beams. For the design of suitable light fields we present a mathematical model with a corresponding numerical simulation of the so-called inverse problem. Furthermore, details of an experiment carried out with a holographically reconstructed light field are discussed.
In atom lithography with optical masks, deposition of an atomic beam on a given substrate is controlled by a standing light-wave field. The lateral intensity distribution of the light field is transferred to the substrate with nanometer scale. We have tailored a complex pattern of this intensity distribution through diffraction of a laser beam from a hologram that is stored in a photorefractive crystal. This method can be extended to superpose 1000 or more laser beams. The method is furthermore applicable during growth processes and thus allows full 3D structuring of suitable materials with periodic and nonperiodic patterns at nanometer scales.
Videotape with a sinusoidal magnetization of 31 μm wavelength is used to reflect Cs atoms with unit reflectivity in a 75 m/s atomic beam. The atoms serve as a probe, allowing us to measure the magnetic field at the surface. A technique is presented for mounting the videotape so that its surface can be curved to a specific shape or made flexible. We show that such a reflector provides high-quality grazing-incidence atom optics and we demonstrate deflections as large as 23° in a whispering-gallery geometry.
We have theoretically and experimentally investigated the focusing properties of a detuned pulsed standing wave onto a beam of neutral atoms. In close analogy to the continuous-wave situation the dipole force leads to a periodic focusing of atoms with a period of λ/2, provided an adiabatic condition is fulfilled. Pulsed laser light is conveniently converted to short wavelengths and hence offers advantages in the application of atom lithography with elements of technological interest having blue or UV resonance lines.
M. Mützel Atomlithographie mit einer gepulsten optischen Stehwelle, (1999), DiplomarbeitBibTeX